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HFP10N60S
Nov 2007
BVDSS = 600 V
HFP10N60S
600V N-Channel MOSFET
FEATURES
q Originative New Design q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology q Very Low Intrinsic Capacitances q Excellent Switching Characteristics q Unrivalled Gate Charge : 29 nC (Typ.) q Extended Safe Operating Area q Lower RDS(ON) : 0.67 (Typ.) @VGS=10V q 100% Avalanche Tested
RDS(on) typ = 0.67 ID = 9.5 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TC=25 unless otherwise specified
Parameter
Value 600
Units V A A A V mJ A mJ V/ns W W/
- Continuous (TC = 25) - Continuous (TC = 100) - Pulsed
(Note 1)
9.5 5.7 38 30
(Note 2) (Note 1) (Note 1) (Note 3)
700 9.5 15.6 4.5 156 1.25 -55 to +150 300
Power Dissipation (TC = 25) - Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Resistance Characteristics
Symbol RJC RCS RJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.5 -Max. 0.8 -62.5 /W Units
SEMIHOW REV.A0,Nov 2007
HFP10N60S
Electrical Characteristics TC=25 C
Symbol Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 4.75 A 2.0 --0.67 4.0 0.8 V
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 , Referenced to 25 VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125 VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.7 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature Coefficient /TJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1450 145 13 1885 190 17
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 4,5)
VDS = 300 V, ID = 9.5 A, RG = 25
--------
23 69 144 77 29 6.8 10.3
55 150 300 165 38 ---
nC nC nC
VDS = 480V, ID = 9.5 A, VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 9.5 A, VGS = 0 V IS = 9.5 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------420 4.2 9.5 38 1.4 --A V C
Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=14.2mH, IAS=9.5A, VDD=50V, RG=25, Starting TJ =25C 3. ISD9.5A, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature
SEMIHOW REV.A0,Nov 2007
HFP10N60S
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
2.0
RDS(ON)[], Drain-Source On-Resistance
1.5
VGS = 10V
1.0
VGS = 20V
0.5
* Note : TJ = 25oC
0.0 0 5 10 15 20 25 30 35
ID, Drain Current[A]
IDR, Reverse Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
VGS, Gate-Source Voltage [V]
2500
Ciss
10
VDS = 120V VDS = 300V VDS = 480V
Capacitances [pF]
2000
8
1500
Coss
Note ; 1. VGS = 0 V 2. f = 1 MHz
6
1000
4
Crss
500
2
* Note : ID = 9.5A
0 10-1
100
101
0 0 4 8 12 16 20 24 28 32
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A0,Nov 2007
HFP10N60S
Typical Characteristics
(continued)
2.5
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
2.0
1.5
1.0
0.5
Note : 1. VGS = 10 V 2. ID = 4.75 A
0.0 -100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation vs Temperature
102
10
Figure 8. On-Resistance Variation vs Temperature
Operation in This Area is Limited by R DS(on)
10 s 100 s 1 ms 10 ms 100 ms DC
8
ID, Drain Current [A]
ID, Drain Current [A]
103
101
6
100
4
10-1
* Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
2
10-2 100
101
102
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
100
D=0.5
ZJC(t), Thermal Response
0.2
10-1
0.1 0.05 0.02 0.01
* Notes : 1. ZJC(t) = 0.8 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
10-2
single pulse
PDM t1 t2
100 101
10-5
10-4
10-3
10-2
10-1
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
SEMIHOW REV.A0,Nov 2007
HFP10N60S
Fig 12. Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
10V
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
VDS
90%
10V
DUT
Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L VDS VDD ID RG DUT VDD BVDSS IAS
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
ID (t) VDS (t)
tp
10V
Time
SEMIHOW REV.A0,Nov 2007
HFP10N60S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT + VDS _ IS L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
SEMIHOW REV.A0,Nov 2007
HFP10N60S
Package Dimension
TO-220 (A)
9.900.20
3
0 .6
0.
20
4.500.20 1.300.20
15.700.20
2.800.20
9.190.20
6.500.20
13.080.20
0.800.20 2.54typ 2.54typ 0.500.20
3.020.20
1.270.20 1.520.20
2.400.20
SEMIHOW REV.A0,Nov 2007
HFP10N60S
TO-220 (B)
0.20
. 3
84
0
0 .2
4.570.20 1.270.20
15.440.20
2.740.20
9.140.20
6.300.20
2.670.20
13.280.20
1.270.20
2.670.20
0.810.20 2.54typ 2.54typ 0.400.20
SEMIHOW REV.A0,Nov 2007

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